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Effect of dipole corrections and spin orbit coupling on tungsten dichalcogenides monolayer: a in silico first principles study

dc.contributor.authorObodo, Kingsley O.
dc.contributor.authorOuma, Cecil N.M.
dc.contributor.authorGebreyesus, Grebremedh
dc.contributor.authorObodo, Joshua T.
dc.contributor.authorBraun, Moritz
dc.contributor.researchID30916364 - Ouma, Cecil Naphtaly Moro
dc.date.accessioned2019-02-28T09:53:31Z
dc.date.available2019-02-28T09:53:31Z
dc.date.issued2018
dc.description.abstractThe structural and electronic properties of tungsten dichalogenides compounds (WS 2 , WSe 2 , WTe 2 ) were investigated from first principles calculations. We found that the structural and electronic properties changed both as a function of the dipole corrections and spin-orbit coupling (SOC). Comparing the calculated results with experimental values, we found that introducing SOC by itself in these 2D materials grossly underestimates the electronic band gap. Adding the self-consistent dipole correction results in larger electronic band gap for these tungsten dichalogenide compounds. Thus, the influence of dipole corrections in these 2D WX 2 materials was found to be significant. The SOC are not relevant for these materials and care should be taken on application of these dipole correctionsen_US
dc.identifier.citationObodo, K.O. et al. 2018. Effect of dipole corrections and spin orbit coupling on tungsten dichalcogenides monolayer: a in silico first principles study. Open Innovations Conference (OI), 3-5 Oct, Johannesburg, South Africa. [https://doi.org/10.1109/OI.2018.8535859]en_US
dc.identifier.isbn978-1-5386-5318-0 (Online)
dc.identifier.urihttp://hdl.handle.net/10394/31873
dc.identifier.urihttps://ieeexplore.ieee.org/document/8535859
dc.identifier.urihttps://doi.org/10.1109/OI.2018.8535859
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectTungsten dichalogenidesen_US
dc.subjectMonolayeren_US
dc.subjectDipole correctionen_US
dc.subjectSpin orbit couplingen_US
dc.titleEffect of dipole corrections and spin orbit coupling on tungsten dichalcogenides monolayer: a in silico first principles studyen_US
dc.typePresentationen_US

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